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Article Dans Une Revue Optical Materials Express Année : 2023

Low loss SiN films for integrated photonics deposited by PVD at low temperature

Résumé

Integration of SiN films with Si photonics platforms is attractive for the 3D integration of multiple waveguide levels in optical routing circuits. This paper reports on the optical characterization of SiN films deposited by PVD and PECVD with the STMicroelectronics 300 mm Photonic R&D platform at CMOS-compatible temperatures. SiN deposition was engineered to reduce the propagation losses caused by 2 nd harmonic vibrational absorption of NH bonds.
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Dates et versions

hal-04624610 , version 1 (25-06-2024)

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Eva Kempf, Michele Calvo, Florian Domengie, Stephane Monfray, Frederic Boeuf, et al.. Low loss SiN films for integrated photonics deposited by PVD at low temperature. Optical Materials Express, 2023, 13 (5), pp.1353. ⟨10.1364/OME.482742⟩. ⟨hal-04624610⟩
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