Innovative 3D Power Module Defaults Detection via Thermal Impedance Analysis and Simulations
Résumé
This article presents a method for detecting physical defects in an innovative 3D Silicon (Si) power module by measuring thermal impedance (Zth). A non-invasive method for measuring the junction temperature of dies is introduced (voltage drop across a diode under constant current), and a comparison is made with simulation results (CELSIUS EC SOLVER software). The observed differences are analyzed to propose hypotheses for defects origins and location. A scanning electron microscopy (SEM) observation is also used to validate these hypotheses. The results confirm that the comparison between experimental and simulation data of Zth is a precise method for determining the areas of physical defects.
Domaines
Energie électrique| Origine | Fichiers produits par l'(les) auteur(s) |
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